inchange semiconductor product specification silicon npn power transistors BU323AP description with to-3pn package darlington low collector saturation voltage applications designed for automotive ignition,switching regulator and motor control applications. pinning(see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings (tc=25 ) symbol parameter conditions value unit v ceo(sus) collector-emitter voltage open base 400 v v cev collector-emitter voltage open base 475 v v ebo emitter-base voltage open collector 6 v i c collector current 10 a i cm collector current-peak 16 a i b base current 3 a p d total power dissipation t c =25 125 w t j junction temperature -65~200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU323AP characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=10mh 400 v v cer(sus) collector-emitter sustaining voltage i c =3a; r be =100 ;l=500 h 475 v v cesat-1 collector-emitter saturation voltage i c =3 a;i b =60ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =6a;i b =120m a 1.7 v v cesat-3 collector-emitter saturation voltage i c =10a;i b =300m a 2.7 v v besat-1 base-emitter saturation voltage i c =6a;i b =120m a 2.2 v v besat-2 base-emitter saturation voltage i c =10a;i b =300m a 3 v i cer collector cut-off current v ce =rated;v be =100 1 ma i ebo emitter cut-off current v eb =6v; i c =0 40 ma i cbo collector cut-off current v cb =rated; i e =0 1 ma h fe-1 dc current gain i c =3a ; v ce =6v 300 550 h fe-2 dc current gain i c =6a ; v ce =6v 150 350 2000 h fe-3 dc current gain i c =10a ; v ce =6v 50 150 v be base-emitter on voltage i c =10a ; v ce =6v 2.5 v v f diode forward voltage i f =10a 2 3.5 v cob output capacitance v cb =10v,i e =0;f t =100khz 165 350 pf switching times t s storage time 7.5 15 s t f fall time i c =6a ; i b1 =i b2 =0.3a v cc =12v ; 5.2 15 s
inchange semiconductor product specification 3 silicon npn power transistors BU323AP package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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